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Noise modeling and performance in 0.1 5-μm fully depleted SOI MOSFET

Author(s):
Pailloncy, G. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Ihiguez, B. ( Univ. Rovird i Virgili (Spain) )
Dambrine, G. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Dehan, M. ( Univ. Catholique de Louvain (Belgium) )
Raskin, J.-P. ( Univ. Catholique de Louvain (Belgium) )
Matsuhashi, H. ( Oki Elecfric Industry Co., Ltd. (Japan) )
Delatte, P. ( CISSOID (Belgium) )
Danneville, F. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
3 more
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. date:
2004
Page(from):
122
Page(to):
130
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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