Design of high-average-power clean EUV light source based on laser-produced Xenon plasma

Design of high-average-power clean EUV light source based on laser-produced Xenon plasma

Author(s):

Endo, A. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Abe, T. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Suganuma, T. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Imai, Y. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Someya, H. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Hoshino, H. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Masaki, N. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Soumagne, G. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Komori, H. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Takabayashi, Y. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

Mizoguchi, H. ( Extreme Ultraviolet Lithography System Development Association (Japan) )

6 more

Publication title:

Laser-generated and other laboratory X-ray and EUV sources, optics, and applications : 4-6 August 2003, San Diego, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5196

Pub. Year:

2004

Page(from):

256

Page(to):

262

Pages:

7

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819450692 [0819450693]

Language:

English

Call no.:

P63600/5196

Type:

Conference Proceedings

Details

TDL ID:	ZA00014633
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications
Conf. info. (Number):	2003
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	2003.08.04-2003.08.06

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