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Bilayer silylation process for 193-nm lithography

Author(s):
  • Satou, I. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
  • Kuhara, K. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
  • Endo, M. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
  • Morimoto, H. ( Semiconductor Leading Edge Technologies, Inc. (Japan) )
Publication title:
Microlithography 1999 : advances in resist technology and processing XVI : 15-17 March 1999, Santa Clara, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3678
Pub. Year:
1999
Page(from):
251
Page(to):
263
Pages:
13
Pub. info.:
Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819431523 [0819431524]
Language:
English
Call no.:
P63600/3678-1
Type:
Conference Proceedings

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