Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation

Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation

Author(s):

Usuda, Koji

Publication title:

Spatially resolved characterization of local phenomena in materials and nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

738

Pub. Year:

2003

Page(from):

317

Page(to):

644

Pages:

334

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996755 [1558996753]

Language:

English

Call no.:

M23500/738

Type:

Conference Proceedings

Details

TDL ID:	ZA00014609
Series ID:	PA00000011
Conf. info. (Name):	Symposium on spatially resolved characterization of local phenomena in materials and nanostructures
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.05

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