Blank Cover Image

Growth Of Gan Nanorods On (0001) Sapphire Substrates By Hydride Vapor Phase Epitaxy

Author(s):
Publication title:
Nanostructured interfaces : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
727
Pub. Year:
2002
Page(from):
97
Page(to):
102
Pages:
6
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996632 [155899663X]
Language:
English
Call no.:
M23500/727
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Correlation Of Surface Morphologies With Mn Compositions of Ga1-xMnxAs Epilayers Grown By Liquid Phase Epitaxy

Kim, Hwa-Mok, Leem, Jae-Hyeon, Choi, Sung Woo, Kim, Deuk Young, Kang, Tae-Won

Materials Research Society
7 Conference Proceedings Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy

Gu, Shulin, Zhang, Rong, Zhang, Ling, Kuech, T.F.

Materials Research Society
2 Conference Proceedings Growth of InGaN Nanorods as the Blue Light Source for White Light Emitting Devices

Kim, Hwa-Mok, Kang, Tae Wan, Chung, Kwan Soo

Materials Research Society
8 Conference Proceedings Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

Kim, Chang-Soo, Moon, Ji-Hyun, Lee, Sang-Jun, Noh, Sam-Kyu, Kim, Je Won, Lee, Kyuhan, Choi, Yong Dae, Song, Jay P.

Materials Research Society
3 Conference Proceedings Preparation of 30x30 mm2 Free-Standing GaN Wafer by Mechanical Liftoff and Optical Properties in The Backside of The Free GaN by Cathodoluminescence

Kim, Hwa-Mok, Oh, Jae-Eung, Kang, Tae-Won

Materials Research Society
9 Conference Proceedings (527a) Growth of Unidirectional Indium Nitride (InN) Nanorods On Silicon Substrate Using Hydride Metal-Organic Vapor Phase Epitaxy

Vaibhav Chaudhari, Rangarajan Krishnan, David Wood, Tim J. Anderson

American Institute of Chemical Engineers
4 Conference Proceedings Properties of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Kang, T.W., Kim, H.-M.

Electrochemical Society
10 Conference Proceedings Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope

Florescu, D. I., Asnin, V. A., Mourokh, L. G., Pollak, F. H., Molnar, R. J.

MRS-Materials Research Society
5 Conference Proceedings Plasma-Induced Effects On The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001)

Florescu, D. I., Pollak, Fred H., Lanford, William B., Khan, Farid, Adesida, I., Molnar, R. J.

Materials Research Society
11 Conference Proceedings A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy (HVPE)

D. S. Kim, H. J. Lee, Y. J. Kim, S. K. Jong, D. K. Lee

Society of Photo-optical Instrumentation Engineers
6 Conference Proceedings Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy

Goss, S. H., Young, A. P., Brillson, L. J., Loo, D. C., Molnar, R. J.

Materials Research Society
12 Conference Proceedings GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J., Martin, D., Buehlmann, H.J., Gradecak, S., Ilegems, M.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12