Sub 0.1um Asymmetric Gamma-Gate PHEMT Process Using Electron Beam Lithography

Sub 0.1um Asymmetric Gamma-Gate PHEMT Process Using Electron Beam Lithography

Author(s):

Publication title:

Materials issues for tunable RF and microwave devices III : symposium held April 2-3, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

720

Pub. Year:

2002

Page(from):

85

Page(to):

90

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996564 [1558996567]

Language:

English

Call no.:

M23500/720

Type:

Conference Proceedings

Details

TDL ID:	ZA00014593
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials issues for tunable rf and microwave devices
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.02-2002.04.03

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