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Electrical Signature Of Ion-Implantation Induced Defects In N-Silicon In The Defect Cluster Regime Studied Using Dlts And Isothermal Transient Spectroscopies

Author(s):
Publication title:
Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
719
Pub. Year:
2002
Page(from):
303
Page(to):
310
Pages:
8
Pub. info.:
Warrendale, Pa: Materials Research Society
ISSN:
02729172
ISBN:
9781558996656 [1558996659]
Language:
English
Call no.:
M23500/719
Type:
Conference Proceedings

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