Recent Progresses in Understanding Gettering in Silicon
- Author(s):
- Tan, T.Y.
- Publication title:
- Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 719
- Pub. Year:
- 2002
- Page(from):
- 89
- Page(to):
- 100
- Pages:
- 12
- Pub. info.:
- Warrendale, Pa: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996656 [1558996659]
- Language:
- English
- Call no.:
- M23500/719
- Type:
- Conference Proceedings
Similar Items:
North Holland |
7
Conference Proceedings
The Influence of Carbon on the Effective Diffusivities of Intrinsic Point Defects in Silicon
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
3
Conference Proceedings
PRESENT UNDERSTANDING OF PONT DIEECT PARAMETERS AND DIFFUSION IN SILICON: AN OVERVIEW
Electrochemical Society |
MRS - Materials Research Society |
4
Conference Proceedings
EXIGENT-ACCOMODATION-VOLUME OF PRECIPITATION AND FORMATION OFOXYGEN PRESIPITATES IN SILICON
Materials Research Society |
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
Dislocation nucleation models from point defect condensations in silicon and germanium
North Holland |
Electrochemical Society |
Materials Research Society |
12
Conference Proceedings
Undissociated dislocations and intermediate defects in As+ ion damaged silicon
North Holland |