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Non-Routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-Low Energy B-Implanted Si Using Secondary Ion Mass Spectrometry

Author(s):
Publication title:
Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
717
Pub. Year:
2002
Page(from):
263
Page(to):
276
Pages:
14
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996533 [1558996532]
Language:
English
Call no.:
M23500/717
Type:
Conference Proceedings

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