Blank Cover Image

Modeling of TED and Point Defect Parameter Extraction

Author(s):
Publication title:
Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
717
Pub. Year:
2002
Page(from):
187
Page(to):
194
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996533 [1558996532]
Language:
English
Call no.:
M23500/717
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

Dunham, S.T., Wittel, F.

Electrochemical Society
7 Conference Proceedings Ab-Initio Calculations To Model Anomalous Fluorine Behavior

Diebel, Milan, Dunham, Scott T.

Materials Research Society
2 Conference Proceedings Point Defect Properties From Metal Diffusion Experiments-What Does the Data Really Tell Us?

Chakravarthi, Srinivasan, Dunham, Scott T.

MRS - Materials Research Society
8 Conference Proceedings Modeling Fermi Level Effects in Atomistic Simulations

Qin, Zudian, Dunham, Scott T.

Materials Research Society
3 Conference Proceedings Modeling Interactions of Point Defects with Precipitates Using the Reduced Precipitation Model

Clejan, I., Dunham, S.T.

Electrochemical Society
9 Conference Proceedings Optical and Electrical Modeling of Polymer Thin-Film Photovoltaics

Wenjun Jiang, Scott T. Dunham

Materials Research Society
4 Conference Proceedings MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON

Agarwal, A.M., Dunham, S.T.

Electrochemical Society
10 Conference Proceedings MODELING OF DOPANT DIFFUSION DURING ANNEALING OF SUB-AMORPHIZING IMPLANTS

Dunham, Scott

MRS - Materials Research Society
5 Conference Proceedings Moment-Based Modelling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

Gencer, Alp H., Dunham, Scott T.

MRS - Materials Research Society
11 Conference Proceedings Spatial Variations in Point Defect Concentrations and Their Impact on Submicron Device Structures

Dunham, S.T., Agarwal, A.M.

Electrochemical Society
6 Conference Proceedings Atomistic Modeling of {311} Defects and Dislocation Ribbons

Bart Trzynadlowski, Scott Dunham, Chihak Ahn

Materials Research Society
12 Conference Proceedings Lattice Monte Carlo Simulations of Vacancy-Mediated Diffusion and Aggregation Using Ab Initio Parameters

Bunea, Marius M., Dunham, Scott T.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12