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Comparison Of MOCVD Precursors For Hf1-xSixO2 Gate Dielectric Deposition

Author(s):
Hendrix, B.C.
Borovik, A.S.
Wang, Z.
Xu, C.
Roeder, J.F.
Baum, T.H.
Bevan, M.J.
Visokay, M.R.
Chambers, J.J.
Rotondaro, A.L.P.
Bu, H.
Colombo, L.
7 more
Publication title:
Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
716
Pub. Year:
2002
Page(from):
273
Page(to):
278
Pages:
6
Pub. info.:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558996526 [1558996524]
Language:
English
Call no.:
M23500/716
Type:
Conference Proceedings

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