Effective Dielectric Thickness Scaling For It High-K Gate Dielectric MOSFETs
- Author(s):
- Publication title:
- Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 716
- Pub. Year:
- 2002
- Page(from):
- 215
- Page(to):
- 220
- Pages:
- 6
- Pub. info.:
- Warrendale: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996526 [1558996524]
- Language:
- English
- Call no.:
- M23500/716
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Effect Of Technology Scaling On Mos Transistors With High-K Gate Dielectrics
Materials Research Society |
SPIE-The International Society for Optical Engineering, Narosa |
2
Conference Proceedings
A Comparative Study of Scaling Properties of MOS Transistors in CHE and CHISEL Injection Regime
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
3
Conference Proceedings
Device Scaling Effects On Substrate Enhanced Degradation In Mos Transistors
Materials Research Society |
9
Conference Proceedings
Electrically Induced Junction MOSFET For High Performance Sub-50nm CMOS Technology
Materials Research Society |
4
Conference Proceedings
Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
11
Conference Proceedings
Suppression Of Parasitic BJT Action In Single Pocket Thin Film Deep Sub-Micron Soi Mosfets
Materials Research Society |
6
Conference Proceedings
Polarity Dependence Of Degradation In Ultra Thin Oxide And Jvd Nitride Gate Dielectrics
Materials Research Society |
SPIE-The International Society for Optical Engineering |