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Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitors by Hydrogen Etching of the Substrate

Author(s):
Publication title:
Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
716
Pub. date:
2002
Page(from):
171
Page(to):
176
Pages:
6
Pub. info.:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558996526 [1558996524]
Language:
English
Call no.:
M23500/716
Type:
Conference Proceedings

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