Plasma Enhanced Atomic Layer Deposition Of ZrO2 Gate Dielectric

Plasma Enhanced Atomic Layer Deposition Of ZrO2 Gate Dielectric

Author(s):

Koo, Jaehyoung

Publication title:

Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

716

Pub. Year:

2002

Page(from):

67

Page(to):

72

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996526 [1558996524]

Language:

English

Call no.:

M23500/716

Type:

Conference Proceedings

Details

TDL ID:	ZA00014589
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon materials - processing characterization and reliability
Conf. info. (Number):	2002
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

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