Linewidth Dependence Of The Reverse Bias Junction Leakage For Co-Silicided Source/Drain Junctions
- Author(s):
Lauwers, Anne Potter, Muriel de Lindsay, Richard Chamirian, Oxana Demeurisse, Caroline Vrancken, Christa Maex, Karen - Publication title:
- Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 716
- Pub. Year:
- 2002
- Page(from):
- 29
- Page(to):
- 34
- Pages:
- 6
- Pub. info.:
- Warrendale: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996526 [1558996524]
- Language:
- English
- Call no.:
- M23500/716
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Analysis Of Silicide/Diffusion Contact Resistance Making Use Of Transmission Line Structures
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
26 Co-silicide, Co(Ni)-silicide and Ni-silicide to source¥drain contact resistance
Electrochemical Society |
3
Conference Proceedings
Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
5
Conference Proceedings
Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 μm Technologies
Materials Research Society |
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |