Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC

Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC

Author(s):

Bathe, Ravi

Publication title:

Current issues in heteroepitaxial growth--stress relaxation and self assembly : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

696

Pub. Year:

2002

Page(from):

87

Page(to):

92

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996328 [155899632X]

Language:

English

Call no.:

M23500/696

Type:

Conference Proceedings

Details

TDL ID:	ZA00014571
Series ID:	PA00000011
Conf. info. (Name):	Symposium on current issues in heteroepitaxial growth
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.29

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