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Back-Doping Design in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

Author(s):
Publication title:
GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
693
Pub. Year:
2002
Page(from):
811
Page(to):
816
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996298 [155899629X]
Language:
English
Call no.:
M23500/693
Type:
Conference Proceedings

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