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Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

Author(s):
Kim, J.
Luo, B.
Mehandru, R.
Ren, F.
Lee, K.P.
Pearton, S.J.
Polyakov, A.Y.
Smirnov, N.B.
Govorkov, A.V.
Osinsky, A.V.
Norris, P.E.
6 more
Publication title:
GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
693
Pub. Year:
2002
Page(from):
653
Page(to):
658
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996298 [155899629X]
Language:
English
Call no.:
M23500/693
Type:
Conference Proceedings

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