Electrical and Optical Studies of Si-Implanted GaN

Electrical and Optical Studies of Si-Implanted GaN

Author(s):

Publication title:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

693

Pub. Year:

2002

Page(from):

407

Page(to):

412

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

Language:

English

Call no.:

M23500/693

Type:

Conference Proceedings

Details

TDL ID:	ZA00014569
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan and related alloys
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.30

Similar Items:

1 Conference Proceedings Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L. Materials Research Society	7 Conference Proceedings Electrical Characterization of As- and [As+Si]-Doped GaN Grown by Metalorganic Chemical Vapor Deposition Ahoujja, M., Elhamri, S., Berney, R., Yeo, Y. K., Hengehold, R. L. Materials Research Society
2 Conference Proceedings Deep Centers and Their Capture Barriers in MOCVD-Grown GaN Johnstone, Daniel K., Ahoujja, Mohamed, Yeo, Yung Kee, Hengehold, Robert L., Guido, Louis Materials Research Society	8 Conference Proceedings Annealing Study of Ion Implated MOCVD and MBE Grown GaN Silkowski, E., Yeo, Y. K., Hengehold, R. L., Khan, M. A., Lei, T., Evans, K., Cerny, C. MRS - Materials Research Society
3 Conference Proceedings Luminescence study of the INTRA-4f emissions from GaAs:(Er+O) and AlxGa1-xAs:(Er+O) Colon, Jose E., Elsaesser, David W., Yeo, Yung Kee, Hengehold, Robert L., Pomrenke, Gernot S. MRS - Materials Research Society	9 Conference Proceedings Annealing studies of Er-implanted GaAs and the excitation mechanism of Er in GaAs Elsaesser, D. W., Colon, J. E., Yeo, Y. K., Hengehold, R. L., Pomrenke, G. S. MRS - Materials Research Society
4 Conference Proceedings Luminescence and annealing studies of Er-implanted GaN with and without oxygen co-doping Silkowski,E., Yeo,Y.K., Hengehold,R.L., Everitt,L.R. Trans Tech Publications	10 Conference Proceedings Deep Level Defect Study of Ion Implanted(Ar,Mg,Cr)n-Type 6H-SiC by Deep Level Transient Spectroscopy Scott,M.B., Scofield,J.D., Yeo,Y.K., Hengehold,R.L. Trans Tech Publications
5 Conference Proceedings Neodymium and Erbium Implanted GaN Silkowski, E., Yeo, Y. K., Hengehold, R. L., Goldenberg, B., Pomrenke, G. S. MRS - Materials Research Society	11 Conference Proceedings Characterization of Ion Implanted GaN Skromme, B. J., Martinez, G. L., Krasnobaev, L., Poker, D. B. Materials Research Society
6 Conference Proceedings Optical Characterization of Acceptor Implantation in GaN Skromme, B.J., Martinez, G.L., Suvkhanov, A., Krasnobaev, L., Poker, D.B. Electrochemical Society	12 Conference Proceedings Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12