Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes | 東京工業大学附属図書館文献データベース

Blank Cover Image

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

Author(s):

Kozhukhova, E.A.

Publication title:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

693

Pub. Year:

2002

Page(from):

335

Page(to):

340

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

Language:

English

Call no.:

M23500/693

Type:

Conference Proceedings

Details

TDL ID:	ZA00014569
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan and related alloys
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.30

Similar Items:

1 Conference Proceedings Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K.P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., … Materials Research Society	7 Conference Proceedings Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes Allums, K., Luo, B., Mehandru, R., Gila, B.P., Dwivedi, R., Fogarty, T.N., Wilkins, R., Abernathy, C.R., Ren, F., … Materials Research Society
2 Conference Proceedings Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments Kim, J., Luo, B., Mehandru, R., Ren, F., Lee, K.P., Pearton, S.J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., … Materials Research Society	8 Conference Proceedings Persistent Photoconductivity in AlGaN Films Grown by MOCVD Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M. MRS - Materials Research Society
3 Conference Proceedings Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage Zhang, A.P., Johnson, J.W., Ren, F., Han, J., Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Redwing, J.M., Lee, K.P., … Electrochemical Society	9 Conference Proceedings Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Shin, M., Skowronski, M., Greve, D. W. MRS - Materials Research Society
4 Conference Proceedings Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., … Materials Research Society	10 Conference Proceedings Deep Levels in High Resistivity AlGaN Films Grown by MOCVD Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M. MRS - Materials Research Society
5 Conference Proceedings Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Kim, Jihyun, Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A, Abernathy, C.R., … Materials Research Society	11 Conference Proceedings Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society
6 Conference Proceedings Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide Kim. J., Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo. B., Oristine, A., Abernathy, C.R., … Electrochemical Society	12 Conference Proceedings Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12