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Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

Author(s):
Roberts, J.C.
Moody, B.F.
Barletta, P.
Aumer, M.E.
LeBoeuf, S.F.
Luther, J.M.
Bedair, S.M.
2 more
Publication title:
Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
692
Pub. Year:
2002
Page(from):
29
Page(to):
34
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996281 [1558996281]
Language:
English
Call no.:
M23500/692
Type:
Conference Proceedings

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