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Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Author(s):
Zhao, J.
Zhang, X.D.
Feng, Z.C.
Deng, J.C.
Jin, P.
Wang, Y.C.
Xu, G.
2 more
Publication title:
Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
692
Pub. date:
2002
Page(from):
3
Page(to):
8
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996281 [1558996281]
Language:
English
Call no.:
M23500/692
Type:
Conference Proceedings

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