Ferromagnetic and Paramagnetic Semiconductors Based Upon GaN, AlGaN, and GaP | 東京工業大学附属図書館文献データベース

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Ferromagnetic and Paramagnetic Semiconductors Based Upon GaN, AlGaN, and GaP

Author(s):

Overberg, Mark E.

Thaler, Gerald T.

Frazier, Rachel M.

Abernathy, Cammy R.

Pearton, Stephen J.

Theodoropoulou, Nikoleta A.

Arnason, Stephen B.

Hebard, Arthur F.

Publication title:

Spintronics : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

690

Pub. Year:

2002

Page(from):

9

Page(to):

14

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996267 [1558996265]

Language:

English

Call no.:

M23500/690

Type:

Conference Proceedings

Details

TDL ID:	ZA00014566
Series ID:	PA00000011
Conf. info. (Name):	Symposium on spintronics
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.29

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