Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates

Author(s):

Publication title:

Materials issues in novel si-based technology : symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

686

Pub. Year:

2002

Page(from):

27

Page(to):

32

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996229 [1558996222]

Language:

English

Call no.:

M23500/686

Type:

Conference Proceedings

Details

TDL ID:	ZA00014562
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials issues in novel si-based technology
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.28

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