A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide Using High Selective CeO2 Slurry

A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide Using High Selective CeO2 Slurry

Author(s):

Publication title:

Chemical-mechanical polishing 2001 -- advances and future challenges : symposium held April 18-20, 2001, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

671

Pub. Year:

2001

Pages:

5

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996076 [1558996079]

Language:

English

Call no.:

M23500/671

Type:

Conference Proceedings

Details

TDL ID:	ZA00014554
Series ID:	PA00000011
Conf. info. (Name):	Symposium On Chemical-Mechanical Polishing
Conf. info. (Number):	2001
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.04.18-2001.04.20

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