CoSi2 Formation Using a Ti Capping Layer - The Influence of Processing Conditions on CoSi2 Nucleation

CoSi2 Formation Using a Ti Capping Layer - The Influence of Processing Conditions on CoSi2 Nucleation

Author(s):

Publication title:

Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

670

Pub. Year:

2002

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996069 [1558996060]

Language:

English

Call no.:

M23500/670

Type:

Conference Proceedings

Details

TDL ID:	ZA00014553
Series ID:	PA00000011
Conf. info. (Name):	Symposium On Gate Stack And Silicide Issues in Silicon Processing
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.04.17-2001.04.19

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