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Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

Author(s):
Publication title:
Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
670
Pub. date:
2002
Pages:
5
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996069 [1558996060]
Language:
English
Call no.:
M23500/670
Type:
Conference Proceedings

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