Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects

Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects

Author(s):

Publication title:

Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

669

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996052 [1558996052]

Language:

English

Call no.:

M23500/669

Type:

Conference Proceedings

Details

TDL ID:	ZA00014552
Series ID:	PA00000011
Conf. info. (Name):	Symposium On Si Front-End Processing
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.04.17-2001.04.19

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