The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon

The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon

Author(s):

Clark, Mark H.

Publication title:

Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

669

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996052 [1558996052]

Language:

English

Call no.:

M23500/669

Type:

Conference Proceedings

Details

TDL ID:	ZA00014552
Series ID:	PA00000011
Conf. info. (Name):	Symposium On Si Front-End Processing
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.04.17-2001.04.19

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