The Effect of Forming Gas Annealing on Pt/(Ba,Sr)Tio3/Pt Thin Film Capacitors for Future DRAM Applications: Electrical Properties and Degradation Mechanisms

The Effect of Forming Gas Annealing on Pt/(Ba,Sr)Tio3/Pt Thin Film Capacitors for Future DRAM Applications: Electrical Properties and Degradation Mechanisms

Author(s):

Publication title:

Ferroelectric thin films IX : symposium held November 26-30, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

655

Pub. Year:

2001

Pages:

11

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995659 [155899565X]

Language:

English

Call no.:

M23500/655

Type:

Conference Proceedings

Details

TDL ID:	ZA00014540
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ferroelectric thin films
Conf. info. (Number):	9th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.26-2000.11.30

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