Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films | 東京工業大学附属図書館文献データベース

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Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

Author(s):

Chaldyshev, V.V.

Suvorova, A. A.

Kolesnikova, A. L.

Preobrazhenskii, V.V.

Semyagin, B. R.

Publication title:

Influences of interface and dislocation behavior on microstructure evolution : symposium held November 27-30, 2000, Boston, Massachuusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

652

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995628 [1558995625]

Language:

English

Call no.:

M23500/652

Type:

Conference Proceedings

Details

TDL ID:	ZA00014537
Series ID:	PA00000011
Conf. info. (Name):	Symposium on influences of interface and dislocation behavior on microstructure evolution
Conf. info. (Number):	2000
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.30

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