A Method to Improve Activation of Implanted Dopants in SiC

A Method to Improve Activation of Implanted Dopants in SiC

Author(s):

Publication title:

Microstructural processes in irradiated materials, 2000 : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

650

Pub. Year:

2001

Pages:

10

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995604 [1558995609]

Language:

English

Call no.:

M23500/650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014535
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microstructural processes in irradiated materials
Conf. info. (Number):	2000
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.29

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