Field-Effect Structure With Double Layer of InGaAs/GaAs Quantum Dots - A New Concept of Electron Tunneling Device

Field-Effect Structure With Double Layer of InGaAs/GaAs Quantum Dots - A New Concept of Electron Tunneling Device

Author(s):

Publication title:

Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

642

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995529 [1558995528]

Language:

English

Call no.:

M23500/642

Type:

Conference Proceedings

Details

TDL ID:	ZA00014528
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor quantum dots
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.30

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