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Observation of a Non-Stoichiometric Layer at the Silicon Dioxide-Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions

Author(s):
Publication title:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
640
Pub. Year:
2001
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
Language:
English
Call no.:
M23500/640
Type:
Conference Proceedings

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