Quality of Thermally Grown Oxides in 4H-SiC Over Nitrogen or Phosphorus Implanted Regions
- Author(s):
- Publication title:
- Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 640
- Pub. Year:
- 2001
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995505 [1558995501]
- Language:
- English
- Call no.:
- M23500/640
- Type:
- Conference Proceedings
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