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Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi- Insulating Substrates

Author(s):
Sghaier, Nabil
Bluet, Jean-Marie
Souifi, Abdel k.
Berenguer, Manuel
Guillot, Gerard
Noblanc, Olivier
Brylinski, Christian
2 more
Publication title:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
640
Pub. date:
2001
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
Language:
English
Call no.:
M23500/640
Type:
Conference Proceedings

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