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Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

Author(s):
Ghosh, R.N.
Ezhilvalavan, S.
Golding, B.
Mukhopadhyay, S.M.
Mahadev, N.
Joshi, P.
Das, M.K.
Cooper, J.A., Jr.
3 more
Publication title:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
640
Pub. Year:
2001
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
Language:
English
Call no.:
M23500/640
Type:
Conference Proceedings

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