Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide
- Author(s):
Williams, J.R. Chung, G.Y. Tin, C.C. McDonald, K. Farmer, D. Chanana, R.K. Weller, R.A. Pantelides, S.T. Holland, O.W. Das, M.K. Lipkin, L.A. Feldman, L.C. - Publication title:
- Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 640
- Pub. Year:
- 2001
- Pages:
- 12
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995505 [1558995501]
- Language:
- English
- Call no.:
- M23500/640
- Type:
- Conference Proceedings
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