Fabrication of a High Power GaN Metal Semiconductor Field-Effect Transistor

Fabrication of a High Power GaN Metal Semiconductor Field-Effect Transistor

Author(s):

Publication title:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

639

Pub. Year:

2001

Pages:

5

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

Language:

English

Call no.:

M23500/639

Type:

Conference Proceedings

Details

TDL ID:	ZA00014526
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan and related alloys
Conf. info. (Number):	2000
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.12.01

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