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High-Frequency Capacitance-Voltage Characteristics of PECVD-Grown SiO2 MIS Structure on GaN and GaN/Al0.4Ga0.6N/GaN Heterostructure

Author(s):
Chen, P.
Zhou, Y.G.
Bu, H.M.
Li, W.P.
Chen, Z.Z.
Shen, B.
Zhang, R.
Zheng, Y.D.
3 more
Publication title:
GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
639
Pub. Year:
2001
Pages:
4
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995499 [1558995498]
Language:
English
Call no.:
M23500/639
Type:
Conference Proceedings

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