Formation of Ge Nanocrystals Passivated With Si by Gas Evaporation of Si and Ge

Formation of Ge Nanocrystals Passivated With Si by Gas Evaporation of Si and Ge

Author(s):

Publication title:

Microcrystalline and nanocrystalline semiconductors-2000 : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

638

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995482 [155899548X]

Language:

English

Call no.:

M23500/638

Type:

Conference Proceedings

Details

TDL ID:	ZA00014525
Series ID:	PA00000011
Conf. info. (Name):	Symposium on microcrystalline and nanocrystalline semiconductors
Conf. info. (Number):	2000
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.30

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