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Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate

Author(s):
Publication title:
Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
875
Pub. date:
2005
Page(from):
409
Page(to):
416
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998292 [1558998292]
Language:
English
Call no.:
M23500/875
Type:
Conference Proceedings

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