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MBE Growth of GaAs on Si through Direct Ge Buffers.

Author(s):
Publication title:
Materials, integration and tecnology for monolithic instruments : symposium held March 29-30, 2005, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
869
Pub. Year:
2005
Page(from):
77
Page(to):
82
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998230 [1558998233]
Language:
English
Call no.:
M23500/869
Type:
Conference Proceedings

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