N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

Author(s):

Eneman, G.

Publication title:

Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

864

Pub. Year:

2005

Page(from):

119

Page(to):

124

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998179 [1558998179]

Language:

English

Call no.:

M23500/864

Type:

Conference Proceedings

Details

TDL ID:	ZA00014508
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2005
Conf. info. (Venue):	San Francisco, California, U.S.A.
Conf. info. (Date):	2005.03.28-2005.04.01

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