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A study of V3+ and the vanadium acceptor level in semi-insulating 6H-SiC

Author(s):
Publication title:
Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
864
Pub. date:
2005
Page(from):
15
Page(to):
20
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998179 [1558998179]
Language:
English
Call no.:
M23500/864
Type:
Conference Proceedings

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