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Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at 〜3.4 eV and 〜3.2 eV

Author(s):
Bai, J.
Dudley, M.
Chen, L.
Skromme, B. J.
Hartlieb, P. J.
Michaels, E.
Kolis, J. W.
Wagner, B.
Davis, R. F.
Chowdhury, U.
Dupuis, R. D.
6 more
Publication title:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
831
Pub. Year:
2005
Page(from):
721
Page(to):
726
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
Language:
English
Call no.:
M23500/831
Type:
Conference Proceedings

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