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Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication

Author(s):
Hayakawa, R.
Yoshimura, T.
Nakae, M.
Uehara, T.
Ashida, A.
Fujimura, N.
1 more
Publication title:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
831
Pub. Year:
2005
Page(from):
671
Page(to):
676
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
Language:
English
Call no.:
M23500/831
Type:
Conference Proceedings

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