Optimization of Growth and Activation of Highly Doped p-type GaN for Tunnel Junctions

Optimization of Growth and Activation of Highly Doped p-type GaN for Tunnel Junctions

Author(s):

Publication title:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

831

Pub. Year:

2005

Page(from):

601

Page(to):

606

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

Language:

English

Call no.:

M23500/831

Type:

Conference Proceedings

Details

TDL ID:	ZA00014485
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan, ain, inn and their alloys
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2004.11.29-2004.12.03

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