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AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device

Author(s):
Yoshida, Seikoh
Ikeda, Nariaki
Li, Jiang
Hataya, Kohji
Wada, Takahiro
Takehara, Hironari
1 more
Publication title:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
831
Pub. date:
2005
Page(from):
343
Page(to):
348
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
Language:
English
Call no.:
M23500/831
Type:
Conference Proceedings

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