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Discrete Steps in the Capacitance Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

Author(s):
Xia, Y.
Williams, E.
Park, Y.
Yilmaz, I.
Shah, J. M.
Schubert, E. F.
Wetzel, C.
2 more
Publication title:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
831
Pub. Year:
2005
Page(from):
233
Page(to):
238
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
Language:
English
Call no.:
M23500/831
Type:
Conference Proceedings

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